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SM-8 BIPOLAR TRANSISTOR H-BRIDGE
PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating PARTMARKING DETAIL ZHB6790
ZHB6790
SM-8 (8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current SYMBOL VCBO VCEO VEBO ICM IC NPNs 50 40 5 6 2 PNPs -50 -40 -5 -6 -2 UNIT V V V A A C
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
SCHEMATIC DIAGRAM
E1, E4
CONNECTION DIAGRAM
C1,C2
B1 Q1 Q4 C1, C2 C3, C4 B2 Q2 Q3 B3 B4
B1 B2 E2,E3 B3
5
E1,E4 C3,C4 B4
6
7
E2, E3
8
1
2
3
4
ZHB6790
THERMAL CHARACTERISTICS
PARAMETER Total Power Dissipation at Tamb = 25C* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally Derate above 25C* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally Thermal Resistance - Junction to Ambient* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally SYMBOL Ptot VALUE 1.25 2 10 16 100 62.5 UNIT W W mW/ C mW/ C C/ W C/ W
100 80 60
D=1 t1 D=t1 tP
60 50 40
D=0.5 D=0.2 D=0.1 t1 D=t1 tP
tP
tP
40 20 0 100us
30
D=1
20 10 0 100us 1ms 10ms 100ms 1s
D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse
D=0.05 Single Pulse
1ms
10ms 100ms
Transient Thermal Resistance Single Transistor "On"
2.0 10
Pulse Width
1s
10s
100s
Transient Thermal Resistance Q1 and Q3 or Q2 and Q4 "On"
Pulse Width
10s
100s
1.5 1
Dual T ransistors
Single Transistor
1.0 0.5 0
Full Copper Minimum Copper
Dual T ransistors Single Transistor
0.1 0 20 40
T - Temperature (C)
60
80
100
120
140 160
0.1
Derating curve
Pd v Pcb Area Comparison
Pcb Area (inches squared)
1
10
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. "Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs rurned on.
ZHB6790
PNP TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) MIN. -50 -40 -5 -0.1 -0.1 -0.14 -0.25 -0.45 -0.75 -1.0 -0.75 300 200 150 100 225 24 35 600 MHz pF pF ns TYP. MAX. UNIT V V V
A A
CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-30V VEB=-4V IC=-100mA, IB=-0.5mA* IC=-500mA, IB=-5mA* IC=-1A, IB=-10mA* IC=-2A, IB=-50mA* IC=-1A, IB=-10mA* IC=-1A, VCE=-2V* IC=-100mA, VCE=-2V IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-50mA, VCE=-5V f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, IB1= -50mA IB2=-50mA, VCC=-10V
V V V V V V
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times
VBE(sat) VBE(on) hFE
fT Cibo Cobo ton toff
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%.
ZHB6790
NPN TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) MIN. 50 40 5 0.1 0.1 0.1 0.16 0.5 0.35 0.9 0.73 500 400 150 150 200 16 33 1300 MHz pF pF ns TYP. MAX. UNIT V V V
A A
CONDITIONS. IC=100A IC=10mA* IE=100A VCB=35V VEB=4V IC=100mA, IB=0.5mA* IC=500mA, IB=2.5mA* IC=1A, IB=5mA* IC=2A, IB=30mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=500mA, IB!=50mA IB2=50mA, VCC=10V
V V V V V V
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times
VBE(sat) VBE(on) hFE
fT Cibo Cobo ton toff
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%.
PNP TRANSISTOR TYPICAL CHARACTERISTICS
1.8 IC/IB=100 1.6 1.4 IC/IB=40 IC/IB=10 1.4 Tamb=25C 1.6 1.8
ZHB6790
-55C +25C +100C
IC/IB=100
- (Volts)
- (Volts) V
1.2 1.0 0.8 0.6
1.2 1.0 0.8 0.6 0.4 0.2 0
V
0.4 0.2 0 0.01 0.1 1 10
0.01
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.6 1.4
+100C +25C -55C
VCE=2V 1.6 750 1.4
-55C +25C +100C
IC/IB=100
- Normalised Gain
- Typical Gain
1.2 1.0 0.8 0.6 0.4 0.2
- (Volts) V
1.2 1.0 0.8 0.6 0.4 0.2
500
250
h
0
0.01
0.1
1
10
h
0
0.01
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
1.6 1.4
-55C +25C +100C
VCE=2V
- (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0
V
0
0.01
0.1
1
10
IC - Collector Current (Amps)
VBE(on) v IC
ZHB6790
NPN TRANSISTOR TYPICAL CHARACTERISTICS
Tamb=25C 0.8
IC/IB=200 0.8 IC/IB=100 IC/IB=10
-55C +25C +100C
IC/IB=100
- (Volts)
0.6
- (Volts) V
0.01 0.1 1 10
0.6
0.4
0.4
V
0.2
0.2
0
0 0.01 0.1 1 10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
+100C +25C -55C
VCE=2V 1.5K 1.6 1.4 1.2 1.0 0.8 0.6
-55C +25C +100C
IC/IB=100
- Normalised Gain
1K
500
- Typical Gain
V h
0.4 0.2 0 0.01 0.1 1 10 0 0.01 0.1 1 10
h
0
IC - Collector Current (Amps)
- (Volts)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
1.6 1.4
-55C +25C +100C
VCE=2V
- (Volts) V
1.2 1.0 0.8 0.6 0.4 0.2 0
0
0.01
0.1
1
10
IC - Collector Current (Amps)
VBE(on) v IC
ZHB6790
SAFE OPERATING AREA
10 10
1
1
100m
DC 1s 100ms 10ms 1ms 100s
100m
DC 1s 100ms 10ms 1ms 100s
10m 100m
VCE - Collector Emitter Voltage (V)
see note below
1
10
100
10m 100m
1
10
100
Safe Operating Area (Full Copper)
Safe Operating Area (Minimum Copper)
see note below
VCE - Collector Emitter Voltage (V)
Note: The Safe Operating Area (SOA) charts shown are a combination of the worst case secondary breakdown characteristics for the NPN/PNP pair, and the thermal curves demonstrating the power dissipation capability of the energised ZHB part (opposing NPN-PNP switched on) when mounted on a 50mm x 50mm FR4 PCB. The two cases show: i) full copper present and ii) with minimal copper present - this being defined as an SM-8 footprint with 1.5mm tracks to the edge of the PCB. For example, on a 50mm x 50mm full copper PCB, the ZHB6790 will safely dissipate 2W under DC conditions, taking note of continuous current ratings and voltage limits. Higher powers can be tolerated for pulsed operation, while the shorter pulse widths (100s and 1ms) being relevant for assessment of switching conditions. The ZHB6790 H-Bridge can be modelled within SPICE using the following transistor models configured in the standard H-Bridge topology, as shown in the schematic diagram of this datasheet.
ZETEX H Bridge NPN transistors Spice model Last revision 4/7/97 .MODEL H6790N NPN IS =2.505E-12 NF =1.0058 BF =1360 IKF=1.3 VAF=35 +ISE=.24E-12 NE =1.38 NR =1.001 BR =125 IKR=1 VAR=8 ISC=.435E-12 +NC =1.213 RB =.2 RE =.043 RC =.04 CJC=54.3E-12 MJC=.475 VJC=.765 +CJE=247E-12 TF =.851E-9 TR =15.7E-9 * * *ZETEX H Bridge PNP transistors Spice model Last revision 4/7/97 .MODEL H6790P PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 VAF=23.5 +ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 * (C) 1997 ZETEX PLC The copyright in these models and the design embodied belong to Zetex PLC (Zetex). They are supplied free of charge by Zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other rights are reserved. The models are believed accurate but no condition or warranty as to their merchantability or fitness for purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents. Zetex PLC, Fields New Road, Chadderton,
ZHB6790
He E A A1
5
6
b
3
4
e2
7
o
8
45
1
2
e1 c
D
Lp
3
Dim A A1 b c D E e1 e2 He Lp
Millimetres Min 0.02 0.24 6.3 3.3 6.7 0.9 Typ 0.7 4.59 1.53 Max 1.7 0.1 0.32 6.7 3.7 7.3 Min 0.0008 0.009 0.248 0.130 0.264 0.035
Inches Typ 0.028 0.180 0.060 Max 0.067 0.004 0.013 0.264 0.145 0.287
Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide (c)Zetex plc 1997 Internet: http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.

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